2SC2361 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2361
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=2.5A ; VCE=3V
fT
Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
70
V
6
V
1.5
V
2.0
V
10
µA
10
µA
50
240
70
MHz
2