2SC2358 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2358
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A;IC=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1 A
ICBO
Collector cut-off current
VCB=1000V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
MIN TYP. MAX UNIT
800
V
7
V
1.5
V
1.5
V
0.1 mA
0.1 mA
15
2