2SC2336 Datasheet, PDF (2/5 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2336 2SC2336A 2SC2336B
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE_(sat) Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBE_(sat) Base-emitter saturation voltage
IC=0.5A ;IB=50mA
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=150mA ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=100mA ; VCE=10V
MIN TYP. MAX UNIT
1.0
V
1.5
V
1
µA
1
µA
30
60
320
30
pF
95
MHz
h_FE-2 Classifications
R
Q
P
60-120 100-200 160-320
2