2SC2333 Datasheet, PDF (2/4 Pages) NEC – NPN Silicon Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2333
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A;IB=0.1A;L=1mA
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A
VBEsat
ICER
ICEX1
ICEX2
ICBO
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Collector cut-off current
IC=0.5A; IB=0.1A
VCE=400V;RBE=51:;
Ta=125
VCE=400V;VBE(OFF)=-5.0V
VCE=400V;VBE(OFF)=-5.0V
Ta=125
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
ton
Turn on time
tstg
Storage time
tf
Fall time
IC=0.5A;IB1=-IB2=0.1A
RL=300:;VCC=150V
MIN TYP. MAX UNIT
400
V
1.0
V
1.2
V
1.0 mA
10
µA
1.0 mA
10
µA
10
µA
20
80
10
1.0
µs
2.5
µs
1.0
µs
h_FE-1 classifications
M
L
K
20-40
30-60
40-80
2