2SC2307 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2307
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=7A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=12V
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.5
V
1.3
V
100
µA
100
µA
10
18
MHz
2