2SC2305 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2305
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1m A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
hFE-2
DC current gain
DC current gain
IC=0.8A ; VCE=5V
IC=4A ; VCE=5V
MIN TYP. MAX UNIT
400
V
400
V
7
V
1.0
V
1.5
V
10
µA
10
µA
15
50
10
2