2SC2266 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2266
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.6A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
10
µA
10
µA
10
50
8
2