2SC1953 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1953
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3mA
ICBO
Collector cut-off current
VCB=100V; IE=0
hFE
DC current gain
IC=10mA ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IE=-10mA ; VCB=10V
MIN TYP. MAX UNIT
150
V
5
V
1
V
1
µA
90
450
3
pF
70
MHz
h_FE Classifications
Q
R
S
90-155 130-220 185-330
T
260-450
2