2SC1913 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1913 2SC1913A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1913
2SC1913A
IC=0.1mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage IE=10µA ,IC=0
VCEsat
Collector-emitter
saturation voltage
2SC1913
2SC1913A
IC=0.3A; IB=30mA
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
COB
Output capacitance
fT
Transition frequency
IC=0.3A; IB=30mA
VCB=120V; IE=0
VEB=4V; IC=0
IC=150mA ; VCE=10V
IC=500mA ; VCE=5V
IE=0 ; VCB=100V;f=1MHz
IC=50mA ; VCE=10V
MIN TYP. MAX UNIT
150
V
180
5
V
1.0
V
1.5
1.5
V
1
µA
1
µA
65
330
50
15
pF
120
MHz
h_FE-1 Classifications
P
Q
R
S
65-110 90-155 130-220 185-330
2