2SC1108 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1108
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A;IB=0.3 A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A;IB=0.3 A
VCB=100V; IE=0
VEB=5V; IC=0
hFE
DC current gain
fT
Transition frequency
COB
Output capacitance
IC=1A ; VCE=4V
IC=0.5A ; VCE=12V
IE=0; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
100
V
5
V
1.5
V
2.0
V
0.1
mA
0.1
mA
100
320
10
MHz
25
pF
2