2SB633 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(6.0A,85V,40W)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB633
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=-5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-85
V
-100
V
-6
V
-2.0
V
-1.5
V
-0.1 mA
-0.1 mA
40
320
20
15
MHz
150
pF
h_FE-1 classifications
C
D
E
F
40-80 60-120 100-200 160-320
2