2SB1334A Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1334A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
COB
Output capacitance
IC=-3A; IB=-0.3A
VCB=-80V; IE=0
VEB=-4V; IC=0
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IE=0.5A ; VCE=-5V
MIN TYP. MAX UNIT
-80
V
-80
V
-5
V
-1.5
V
-1.5
V
-10
µA
-10
µA
60
320
100
pF
12
MHz
h_FE Classifications
D
E
F
60-120 100-200 160-320
2