2SB1098 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
T_j=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-3mA
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-3mA
ICBO
Collector cut-off current
VCB=-100V ;IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-2V
hFE-2
DC current gain
IC=-5A ; VCE=-2V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=-3A ;IB1=-IB2=-3mA
R_L=17>;VCC=-50V;
h_FE-1 Classifications
R
O
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SB1098
MIN TYP. MAX UNIT
-1.5
V
-2.0
V
-1
µA
-3
mA
2000
15000
500
0.5
µs
1
µs
1
µs
2