2SB1005 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1005
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA, IE=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ,IB=-30mA
VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-40mA
ICBO
Collector cut-off current
VCB=-50V, IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-3V
hFE-2
DC current gain
IC=-4A ; VCE=-3V
VF
Diode forward voltage
IF=-4A
MIN TYP. MAX UNIT
-50
V
-50
V
-2.5
V
-4.0
V
-0.1 mA
-2.0 mA
750
100
3.5
V
2