2SA882 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=-1.5A
VBE
Base-emitter on voltage
IC=-3A ; VCE=-4V
ICBO
Collector cut-off current
VCE=-130V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
Product Specification
2SA882
MIN TYP. MAX UNIT
-130
V
-1.0
V
-3.0
V
-1.6
V
-0.1
mA
-0.1
mA
40
20
2