2SA670 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA670
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-50V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-50
V
-50
V
-5
V
-1.0
V
-100 µA
-100 µA
35
200
15
MHz
2