2SA626 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
Product Specification
2SA626
MIN TYP. MAX UNIT
-80
V
-80
V
-6
V
-2.0
V
-2.5
V
-0.1 mA
-0.1 mA
30
120
15
MHz
2