2SA1940 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1940
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-6 A;IB=-0.6A
VBE
Base-emitter voltage
IC=-4A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-4A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-120
V
-2.0
V
-1.5
V
-5
µA
-5
µA
55
160
35
30
MHz
260
pF
h_FE-1 classifications
R
O
55-110
80-160
2