2SA1789 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1789
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=-6A;IB=-0.6 A
Base-emitter saturation voltage
IC=-6A;IB=-0.6 A
Collector cut-off current
VCB=-60V; IE=0
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-2V
h_FE classifications
D
E
F
60-120 100-200 160-320
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-0.5
V
-2.0
V
-10 µA
-10 µA
60
320
2