2SA1640 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1640
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.1A
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.1A
ICBO
Collector cut-off current
VCB=-30V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.2A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-30
V
-30
V
-5
V
-0.4
V
-1.0
V
-10
µA
-10
µA
100
300
20
MHz
2