2SA1471 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – 60V/10A High-Speed Switching Applications

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1471
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=<
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A
ICBO
Collector cut-off current
VCB=-40V ;IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
Switching times
IC=-1A ; VCE=-5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=20V; IC=5A
IB1=-IB2=-0.25A
RL=4B
MIN TYP. MAX UNIT
-80
V
-60
V
-5
V
-0.4
V
-100 µA
-100 µA
70
280
100
MHz
0.1
µs
0.5
µs
0.1
µs
2