2SA1292 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – 60V/15A High-Speed Switching Applications

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-7.5A; IB=-0.375A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
Switching times
IC=-1A ; VCE=-5V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A IB1=- IB2=-0.3A
VCC=-20V;RL=3.3B
h_FE Classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SA1292
MIN TYP. MAX UNIT
-80
V
-60
V
-5
V
-0.4
V
-100 µA
-100 µA
70
280
100
MHz
0.1
µs
0.5
µs
0.1
µs
2