2SA1079 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1079
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=8
-160
V
V(BR)CBO Collector-base breakdown voltage
IC=-1µA ,IE=0
-160
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-0.7A; IB=-70mA
-0.45 -1.0
V
VBE
Base-emitter on voltage
IC=-0.7A ; VCE=-5V
-0.8 -1.7
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-1
µA
ICEO
Collector cut-off current
VCE=-160V; IB=0
-100 µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
µA
hFE-1
DC current gain
IC=-0.3A ; VCE=-5V
100
350
hFE-2
DC current gain
IC=-0.7A ; VCE=-5V
50
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=10MHz
120
MHz
COB
Output capacitance
IE=0 ; VCB=-20V;f=1MHz
100
pF
2