2SA1072 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1072 2SA1073
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1072
2SA1073
IC=-1mA ;RBE=;
V(BR)CBO
Collector-base
breakdown voltage
2SA1072
2SA1073
IC=-50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
ICEO
IEBO
hFE-1
hFE-2
Collector
cut-off current
2SA1072 VCB=-120V; IE=0
2SA1073 VCB=-160V; IE=0
Collector
cut-off current
2SA1072 VCE=-120V; RBE=;
2SA1073 VCE=-160V; RBE=;
Emitter cut-off current
VEB=-7V; IC=0
DC current gain
IC=-1A ; VCE=-5V
DC current gain
IC=-7A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
Switching times
IC=-1A ; VCE=-10V;f=10MHz
tr
Rise time
tstg
Storage time
tf
Fall time
IC=-7.5A
IB1=-IB2=-0.75A;RL=4D
MIN TYP. MAX UNIT
-120
V
-160
-120
V
-160
-7
V
-0.9 -1.8
V
-1.25 -1.7
V
-50
µA
-1
mA
-50
µA
60
200
40
300
pF
60
MHz
0.15
µs
0.50
µs
0.11
µs
2