2N6671 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6671 2N6672 2N6673
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6671
2N6672 IC=0.2A ;IB=0
2N6673
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=4A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
2N6671 VCE=450V; VBE(off)=-1.5V
ICEV
Collector cut-off current 2N6672 V_CE=550V; V_BE(off)=-1.5V
2N6673 VCE=650V; VBE(off)=-1.5V
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
fT
Transition frequency
IC=0.2A ; VCE=10V
MIN
TYP. MAX UNIT
300
350
V
400
1.0
V
2.0
V
1.6
V
0.1
mA
2.0
mA
10
40
300
pF
15
60
MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
2