2N6489 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6489 2N6490 2N6491
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6489
2N6490 IC=-0.2A ;IB=0
2N6491
VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A
VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-5A
VBE-1
Base-emitter on voltage
IC=-5A ; VCE=-4V
VBE-2
ICEX
Base-emitter on voltage
2N6489
Collector cut-off current
VBE=-1.5V
2N6490
2N6491
2N6489
IC=-15A ; VCE=-4V
VCE=-45V;
VCE=-40V;TC=150
VCE=-65V;
VCE=-60V;TC=150
VCE=-85V;
VCE=-80V;TC=150
VCE=-20V;IB=0
ICEO
Collector cut-off current 2N6490 V_CE=-30V;I_B=0
2N6491 VCE=-40V;IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-15A ; VCE=-4V
MIN TYP. MAX UNIT
-40
-60
V
-80
-1.3
V
-3.5
V
-1.3
V
-3.5
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-1.0 mA
-1.0 mA
20
150
5
2