2N6285 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6285 2N6286 2N6287
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6285
2N6286 IC=-0.2A ;IB=0
2N6287
VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-40mA
VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-200mA
VBEsat Base-emitter saturation voltage
IC=-20A ;IB=-200mA
VBE
Base-emitter on voltage
IC=-10A ; VCE=-3V
2N6285 VCE=-30V; IB=0
ICEO
Collector cut-off current 2N6286 V_CE=-40V; I_B=0
2N6287 VCE=-50V; IB=0
2N6285
VCE=-60V; VBE=-1.5V
TC=150
ICEX
Collector cut-off current 2N6286
VCE=-80V; VBE=-1.5V
TC=150
2N6287
VCE=-100V; VBE=-1.5V
TC=150
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-10A ; VCE=-3V
hFE-2
DC current gain
IC=-20A ; VCE=-3V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-60
-80
V
-100
-2.0
V
-3.0
V
-4.0
V
-2.8
V
-1.0
mA
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-2.0
mA
750
18000
100
600
pF
2