2N6282 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,160W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6282 2N6283 2N6284
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6282
2N6283 IC=0.2A ;IB=0
2N6284
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=40mA
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=200mA
VBEsat Base-emitter saturation voltage
IC=20A ;IB=200mA
VBE
Base-emitter on voltage
IC=10A ; VCE=3V
2N6282 VCE=30V; IB=0
ICEO
Collector cut-off current 2N6283 V_CE=40V; I_B=0
2N6284 VCE=50V; IB=0
2N6282
VCE=60V; VBE=-1.5V
TC=150
ICEX
Collector cut-off current 2N6283
VCE=80V; VBE=-1.5V
TC=150
2N6284
VCE=100V; VBE=-1.5V
TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=3V
hFE-2
DC current gain
IC=20A ; VCE=3V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
3.0
V
4.0
V
2.8
V
1.0
mA
0.5
5.0
0.5
5.0
mA
0.5
5.0
2.0
mA
750
18000
100
400
pF
2