2N6262 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.(150V, 10A)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6262
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltge IC=5A ;IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=2A
VBE
Base-emitter on voltage
IC=3A ; VCE=2V
ICEO
Collector cut-off current
ICEV
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCE=100V; IB=0
VCE=150V; VBE(off)=1.5V
TC=150
VCB=150V; IE=0
VEB=5V; IC=0
IC=3A ; VCE=2V
fT
Transition frequency
IC=1A;VCE=10V
MIN TYP. MAX UNIT
150
V
2.0
V
3.5
V
1.8
V
1.0
mA
0.1
5.0
mA
0.1
mA
0.1
mA
20
70
0.8
MHz
2