2N5804 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5804 2N5805
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5804
2N5805
IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
ICEO
Collector cut-off current
VCE=RatedVCE; IB=0
2N5804
ICEV
Collector cut-off current
VCE=RatedVCE; VBE(off)=1.5V
2N5805
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Trainsistion frequency
VEB=7V; IC=0
IC=5A ; VCE=4V
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
225
V
300
1.0
V
1.5
V
10
mA
12
mA
10
1.0
mA
20
100
15
MHz
2