2N5758 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5758 2N5759 2N5760
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
2N5758
100
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5759 IC=0.2A ;IB=0
120
V
2N5760
140
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A
1.0
V
VCEsat-2
VBE
ICEO
ICEX
ICBO
Collector-emitter saturation voltage IC=6A ;IB=1.2A
Base-emitter on voltage
IC=3A ; VCE=2V
2N5758 VCE=50V; IB=0
Collector cut-off current 2N5759 V_CE=60V; I_B=0
Collector cut-off current
Collector cut-off current
2N5760
VCE=70V; IB=0
VCE=ratedVCB; VBE(off)=1.5V
TC=150
VCE=ratedVCB; IB=0
2.0
V
1.5
V
1.0
mA
1.0
5.0
mA
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
2N5758
25
100
hFE-1
DC current gain
2N5759 IC=3A ; VCE=2V
20
80
2N5760
15
60
hFE-2
DC current gain
IC=6A ; VCE=2V
5.0
COB
Output capacitance
fT
Transition frequency
IE=0 ; VCB=10V;f=0.1MHz
IC=0.5A ; VCE=20V
1.0
300
pF
MHz
2