2N5612A Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5612A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
IC=50mA ;IB=0
IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=5V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=Rated VCBO; IE=0
VCE= Rated VCEO,IB=0
VEB=5V; IC=0
IC=2.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
100
V
0.5
V
1.5
V
0.1
mA
1.0
mA
0.1
mA
30
150
60
MHz
2