2N3773 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,140V,150W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3773
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
CONDITIONS
IC=0.2A ;IB=0
V_CE(sat)-1 Collector-emitter saturation voltage IC=8A; IB=0.8A
V_CE(sat)-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A
V_BE(on) Base-emitter on voltage
IC=8A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=140V; IB=0
VCE=140V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
I_s/b
DC current gain
IC=16A ; VCE=4V
Second breakdown collector current VCE=100Vdc,t=1.0s,
With base forward biased
Nonrepetitive
MIN TYP. MAX UNIT
140
V
1.4
V
4.0
V
2.2
V
2.0
mA
2.0
10.0
mA
5.0
mA
15
60
5
1.5
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{(th) jc}
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
2