MJE3055T Datasheet, PDF (1/4 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE3055T
DESCRIPTION
·With TO-220 package
·Complement to type MJE2955T
·DC current gain -h_FE = 20–70 @ I_C = 4 Adc
·Collector–emitter saturation voltage -
V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
APPLICATIONS
·Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
70
60
5
10
6
75
150
-55~150
UNIT
V
V
V
A
A
W
VALUE
1.67
UNIT
/W