MJE18006 Datasheet, PDF (1/3 Pages) Motorola, Inc – POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE18006
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
R_{th j-A}
Thermal resistance junction to case
Thermal resistance junction to ambient
VALUE
1000
450
9
6
15
4
8
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.25
62.5
UNIT
/W
/W