MJE15032 Datasheet, PDF (1/3 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE15032
DESCRIPTION
·With TO-220C package
·Complement to type MJE15033
·High transition frequency
·DC current gain specified to 5.0 amperes
h_FE = 50 (Min) @ I_C = 0.5 Adc
h_FE = 10 (Min) @ I_C = 2.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
PD
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
Ta=25
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
R_{th j-A}
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
VALUE
250
250
5
8
16
2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W