MJE13002 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
DESCRIPTION
·With TO-126 package
·High voltage ,high speed
APPLICATIONS
·Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Emitter current
Emitter current-Peak
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
600
300
9
1.5
3
0.75
1.5
2.25
4.5
40
150
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
MAX
3.12
UNIT
/W