MJE12007 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE12007
DESCRIPTION
·With TO-220 package
·High voltage
·Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
·Fluorescent lamp ballasts
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current (DC)
Open collector
ICM
Collector current-Peak
PD
Total power dissipation
TC=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1500
750
9
2.5
5
80
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.56
UNIT
/W