MJ413 Datasheet, PDF (1/3 Pages) Motorola, Inc – 10 AMPERE POWER TRANSISTORS NPN SILICON

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
APPLICATIONS
·Designed for medium-to-high voltage
Inverters,converters,regulators and
switching circuits
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
MJ413
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PD
T_j
T_stg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
400
325
5
10
2
125
-65~150
-65~200
UNIT
V
V
V
A
A
W
MAX
1.0
UNIT
/W