MJ410 Datasheet, PDF (1/3 Pages) Motorola, Inc – 5 AMPERE POWER TRANSISTOR NPN SILICON

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ410
DESCRIPTION
·With TO-3 package
·High collector-emitter voltage
·Low collector saturation voltage
APPLICATIONS
·Designed for medium to high voltage
inverters, converters, regulators and
switching circuits.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
TC=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
200
200
5
5
10
2
100
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
0.75
UNIT
/W