MJ15022 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTOR(16A,200-250V,250W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ15022 MJ15024
DESCRIPTION
·With TO-3 package
·Complement to type MJ15023; MJ15025
·Excellent safe operating area
·High DC current gain
h_FE = 15 (Min) @ I_C = 8 Adc
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
MJ15022
MJ15024
VCEO
Collector-emitter voltage
MJ15022
MJ15024
VEBO
IC
ICM
IB
PD
T_j
T_stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
350
400
200
250
5
16
30
5
250
150
-65~200
UNIT
V
V
V
A
A
A
W
MAX
0.70
UNIT
/W