MJ10012 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,175W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ10012
DESCRIPTION
·With TO-3 package
·High voltage,high current
·DARLINGTON
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open emitter
Open base
Open collector
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
600
400
8
10
15
2
175
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.0
UNIT
/W