MJ1000 Datasheet, PDF (1/3 Pages) Motorola, Inc – Medium-Power Complementary Silicon Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ1000/1001
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High DC current gain
·Complement to type MJ900/901
APPLICATIONS
·For use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
MJ1000
MJ1001
Open emitter
VCEO
Collector-emitter voltage
MJ1000
MJ1001
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PD
Total power dissipation
TC=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
60
80
60
80
5
10
0.1
90
200
-55~200
UNIT
V
V
V
A
A
W