BUX39 Datasheet, PDF (1/3 Pages) Seme LAB – HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX39
DESCRIPTION
·With TO-3 package
·High current ,high speed
APPLICATIONS
·For switching amplifiers,power gates,
switching regulators,switching circuits
converters,inverters and control circuits
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
120
90
7
30
40
6
120
150
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.46
UNIT
/W