BUX12 Datasheet, PDF (1/3 Pages) Seme LAB – NPN MULTI - EPITAXIAL POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX12
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
·High reliability
APPLICATIONS
·Motor control
·Power switching circuits
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Open base
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
300
250
7
20
25
4
150
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
1.17
UNIT
/W