BUW13W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW13W BUW13AW
DESCRIPTION
·With TO-247 package
·High voltage,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BUW13W
BUW13AW
Open emitter
VCEO
Collector-emitter voltage
BUW13W
BUW13AW
Open base
VEBO
IC
ICM
IB
IBM
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
9
15
30
6
9
175
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
0.7
UNIT
K/W