BUW12 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,400-450V,125W)

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage,fast speed
·Low collector saturation voltage
APPLICATIONS
·Specially intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Product Specification
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUW12
BUW12A
VCEO
BUW12
Collector-emitter voltage
BUW12A
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
850
1000
400
450
9
8
20
4
125
150
-65~175
UNIT
V
V
V
A
A
A
W
MAX
1.2
UNIT
/W