BUW11F Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
DESCRIPTION
·With TO-3PFa package
·High voltage ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
l
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUW11F
BUW11AF
VCEO
BUW11F
Collector-emitter voltage
BUW11AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
IBM
Base current-peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
VALUE
850
1000
400
450
9
5
10
2
4
41
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
35
UNIT
K/W