BUV50 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV50
DESCRIPTION
·With TO-3 package
·High dielectric strength
·Short switching time
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb-25
VALUE
250
125
7
25
50
6
12
150
150
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.17
UNIT
/W