BUV27A Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV27A
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM
Collector current (peak)
IB
Base current
IBM
Base current (peak)
Ptot
Total power dissipation
Tj
Max.operating junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
VALUE
300
150
7
12
20
4
6
85
175
-65~175
UNIT
V
V
V
A
A
A
A
W
MAX
1.76
UNIT
/W